Abstract
Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.
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References
V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Semiconductors 43, 1539 (2009).
F. Glas, Phys. Rev. B 74, 121302 (2006).
V. G. Dubrovskii, I. V. Shtrom, R. R. Reznik, Yu. V. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, S. Rouvimov, N. Akopian, T. Kasama, and G. E. Cirlin, Cryst. Growth Des. 16, 7251 (2016).
G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J. C. Harmand, and F. Glas, Phys. Status Solidi RRL 3, 112 (2009).
G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. D. Bouravleuv, K. Durose, Y. Y. Proskuryakov, B. Mendes, L. Bowen, M. A. Kaliteevski, R. A. Abram, and D. Zeze, Phys. Rev. B 82, 035202 (2010).
V. G. Dubrovskii, G. E. Cirlin, I. P. Soshnikov, A. A. Tonkikh, N. V. Sibirev, Yu. B. Samsonenko, and V. M. Ustinov, Phys. Rev. B 71, 205325 (2005).
G. E. Cirlin, V. G. Dubrovski, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko, A. A. Tonkikh, and V. M. Ustinov, Semiconductors 39, 557 (2005).
G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravleuv, and I. P. Soshnikov, Semiconductors 50, 1421 (2016).
M. Tchernycheva, G. Patriarche, L. Travers, V. Zwiller, U. Perinetti, and J.-C. Harmand, Nano Lett. 7, 1500 (2007).
J.-C. Harmand, F. Jabeen, L. Liu, G. Patriarche, K. Gauthron, P. Senellart, D. Elvira, and A. Beveratos, J. Cryst. Growth 378, 519 (2013).
E. D. Minot, F. Kelkensberg, M. van Kouwen, J. A. van Dam, L. P. Kouwenhoven, V. Zwiller, M. T. Borgström, O. Wunnicke, M. A. Verheijen, and E. P. A. M. Bakkers, Nano Lett. 7, 367 (2007).
G. E. Cirlin, M. Tchernycheva, G. Patriarche, and J.-C. Harmand, Semiconductors 46, 175 (2012).
H. Khmissi, K. Naji, M. H. Hadj Alouane, N. Chauvin, C. Bru-Chevallier, B. Ilahi, G. Patriarche, and M. Gendry, J. Cryst. Growth 344, 45 (2012).
P. Kuyanov and R. R. LaPierre, Nanotecnology 26, 315202 (2015).
A. L. Efros and M. Rosen, Ann. Rev. Mater. Sci. 3, 475 (2000).
H. J. Byun, J. C. Lee, and H. Yang, J. Colloid Interface Sci. 355, 35 (2011).
A. M. Munshi, D. L. Dheeraj, V. T. Fauske, D. C. Kim, J. Huh, J. F. Reinertsen, L. Ahtapodov, K. D. Lee, B. Heidari, A. T. J. van Helvoort, B. O. Fimland, and H. Weman, Nano Lett. 14, 960 (2014).
G. A. Antypas and T. O. Yep, J. Appl. Phys. 42, 3201 (1971).
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Original Russian Text © R.R. Reznik, G.E. Cirlin, I.V. Shtrom, A.I. Khrebtov, I.P. Soshnikov, N.V. Kryzhanovskaya, E.I. Moiseev, A.E. Zhukov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 3, pp. 55–61.
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Reznik, R.R., Cirlin, G.E., Shtrom, I.V. et al. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy. Tech. Phys. Lett. 44, 112–114 (2018). https://doi.org/10.1134/S1063785018020116
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DOI: https://doi.org/10.1134/S1063785018020116