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Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

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Abstract

Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.

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Correspondence to G. E. Cirlin.

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Original Russian Text © R.R. Reznik, G.E. Cirlin, I.V. Shtrom, A.I. Khrebtov, I.P. Soshnikov, N.V. Kryzhanovskaya, E.I. Moiseev, A.E. Zhukov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 3, pp. 55–61.

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Reznik, R.R., Cirlin, G.E., Shtrom, I.V. et al. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy. Tech. Phys. Lett. 44, 112–114 (2018). https://doi.org/10.1134/S1063785018020116

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  • DOI: https://doi.org/10.1134/S1063785018020116

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