Technical Physics Letters

, Volume 44, Issue 2, pp 87–89 | Cite as

4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

  • P. A. Ivanov
  • O. I. Kon’kov
  • T. P. Samsonova
  • A. S. Potapov
Article
  • 2 Downloads

Abstract

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++p+n0n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: v sp = 3 × 106 cm/s.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • P. A. Ivanov
    • 1
  • O. I. Kon’kov
    • 1
  • T. P. Samsonova
    • 1
  • A. S. Potapov
    • 1
  1. 1.Ioffe Physical Technical InstituteSt. PetersburgRussia

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