4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers
High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++–p+–n0–n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: v sp = 3 × 106 cm/s.
Unable to display preview. Download preview PDF.
- 8.A. V. Afanas’ev, B. V. Ivanov, V. A. Il’in, A. F. Kardo-Sysoev, V. V. Luchinin, and F. B. Serkov, in Proc. of the All-Russia Conference on Microwave Microelectronics (SPbGETU, St. Petersburg, 2012), p.260.Google Scholar