Skip to main content
SpringerLink
Log in

4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++–p+–n0–n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: v sp = 3 × 106 cm/s.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. I. V. Grekhov and G. A. Mesyats, Phys. Usp. 48, 703 (2005).

    Article  ADS  Google Scholar 

  2. V. I. Brylevskii, I. A. Smirnova, P. B. Rodin, and I. V. Grekhov, Tech. Phys. Lett. 40, 357 (2014).

    Article  ADS  Google Scholar 

  3. V. I. Brylevskii, A. V. Rozhkov, I. A. Smirnova, P. B. Rodin, and I. V. Grekhov, Tech. Phys. Lett. 41, 307 (2015).

    Article  ADS  Google Scholar 

  4. I. V. Grekhov, P. A. Ivanov, A. O. Konstantinov, and T. P. Samsonova, Tech. Phys. Lett. 28, 544 (2002).

    Article  ADS  Google Scholar 

  5. I. V. Grekhov, P. A. Ivanov, D. V. Khristyuk, A. O. Konstantinov, S. V. Korotkov, and T. P. Samsonova, Solid-State Electron. 47, 1769 (2003).

    Article  ADS  Google Scholar 

  6. I. V. Grekhov, A. S. Kyuregyan, T. T. Mnatsakanov, and S. N. Yurkov, Semiconductors 37, 1123 (2003).

    Article  ADS  Google Scholar 

  7. P. A. Ivanov, O. I. Kon’kov, T. P. Samsonova, A. S. Potapov, and I. V. Grekhov, Semiconductors 49, 1511 (2015).

    Article  ADS  Google Scholar 

  8. A. V. Afanas’ev, B. V. Ivanov, V. A. Il’in, A. F. Kardo-Sysoev, V. V. Luchinin, and F. B. Serkov, in Proc. of the All-Russia Conference on Microwave Microelectronics (SPbGETU, St. Petersburg, 2012), p.260.

    Google Scholar 

  9. M. S. Ivanov, P. B. Rodin, P. A. Ivanov, and I. V. Grekhov, Tech. Phys. Lett. 42, 43 (2016).

    Article  ADS  Google Scholar 

  10. P. A. Ivanov, A. S. Potapov, T. P. Samsonova, and I. V. Grekhov, Solid-State Electron. 123, 15 (2016).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physical Technical Institute, St. Petersburg, 194021, Russia

    P. A. Ivanov, O. I. Kon’kov, T. P. Samsonova & A. S. Potapov

Authors
  1. P. A. Ivanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. O. I. Kon’kov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. P. Samsonova
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. S. Potapov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to P. A. Ivanov.

Additional information

Original Russian Text © P.A. Ivanov, O.I. Kon’kov, T.P. Samsonova, A.S. Potapov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 3, pp. 3–8.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ivanov, P.A., Kon’kov, O.I., Samsonova, T.P. et al. 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers. Tech. Phys. Lett. 44, 87–89 (2018). https://doi.org/10.1134/S1063785018020086

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785018020086

Search

Navigation