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Technical Physics Letters

, Volume 43, Issue 12, pp 1124–1127 | Cite as

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

  • N. D. Zhukov
  • D. S. Mosiyash
  • I. V. Sinev
  • A. A. Khazanov
  • A. V. Smirnov
  • I. V. Lapshin
Article
  • 12 Downloads

Abstract

Current–voltage (IV) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the IV curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • N. D. Zhukov
    • 1
  • D. S. Mosiyash
    • 1
  • I. V. Sinev
    • 2
  • A. A. Khazanov
    • 1
  • A. V. Smirnov
    • 2
  • I. V. Lapshin
    • 3
  1. 1.Ref-SVET CompanySaratovRussia
  2. 2.Saratov State UniversitySaratovRussia
  3. 3.State Research and Design Institute of the Rare Metal IndustryMoscowRussia

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