Technical Physics Letters

, Volume 43, Issue 12, pp 1124–1127 | Cite as

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

  • N. D. Zhukov
  • D. S. Mosiyash
  • I. V. Sinev
  • A. A. Khazanov
  • A. V. Smirnov
  • I. V. Lapshin


Current–voltage (IV) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the IV curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Yu. D. Tret’yakov, Nanotekhnol. Ekol. Pr-vo, No. 1 (8), 98 (2011).Google Scholar
  2. 2.
    S. G. Dorofeev, N. N. Kononov, V. M. Zverolovlev, K. V. Zinoviev, V. N. Sukhanov, N. M. Sukhanov, and B. G. Gribov, Semiconductors 48, 360 (2014).ADSCrossRefGoogle Scholar
  3. 3.
    S. M. Pescherova, A. I. Nepomnyaschih, L. A. Pavlova, I. A. Eliseev, and R. V. Presnyakov, Semiconductors 48, 476 (2014).ADSCrossRefGoogle Scholar
  4. 4.
    A. A. Bobkov, A. I. Maximov, V. A. Moshnikov, P. A. Somov, and E. I. Terukov, Semiconductors 49, 1357 (2015).ADSCrossRefGoogle Scholar
  5. 5.
    N. S. Filippov, N. V. Vandysheva, M. A. Parashchenko, S. S. Kosolobov, O. I. Semenova, R. O. Anarbaev, D. V. Pyshnyi, I. A. Pyshnaya, and S. I. Romanov, Semiconductors 48, 967 (2014).ADSCrossRefGoogle Scholar
  6. 6.
    N. P. Klochko, G. S. Khrypunov, Yu. A. Myagchenko, E. E. Melnychuk, V. R. Kopach, K. S. Klepikova, V. M. Lyubov, and A. V. Kopach, Semiconductors 48, 531 (2014).ADSCrossRefGoogle Scholar
  7. 7.
    A. O. Dmitrienko, in Proceedings of the 27th International Display Research Conference EuroDisplay-2007 (Soc. Inform. Display, Moscow, 2007), p.113.Google Scholar
  8. 8.
    V. E. Ovcharenko, E. N. Boyangin, M. M. Myshlyaev, Yu. F. Ivanov, and K. V. Ivanov, Phys. Solid State 57, 1293 (2015).ADSCrossRefGoogle Scholar
  9. 9.
    E. G. Glukhovskoi and N. D. Zhukov, Tech. Phys. Lett. 41, 687 (2015).ADSCrossRefGoogle Scholar
  10. 10.
    A. I. Mikhailov, V. F. Kabanov, and N. D. Zhukov, Tech. Phys. Lett. 41, 1065 (2015).ADSCrossRefGoogle Scholar
  11. 11.
    N. D. Zhukov, E. G. Glukhovskoy, and D. S. Mosiyash, Tech. Phys. Lett. 41, 1068 (2015).ADSCrossRefGoogle Scholar
  12. 12.
    A. M. Glezer, V. L. Stolyarov, A. A. Tomchuk, and N. A. Shurygina, Tech. Phys. Lett. 42, 51 (2016).ADSCrossRefGoogle Scholar
  13. 13.
    T. V. Blank and Yu. A. Gol’dberg, Semiconductors 41, 1263 (2007).ADSCrossRefGoogle Scholar
  14. 14.
    N. D. Zhukov, E. G. Glukhovskoy, and D. S. Mosiyash, Semiconductors 50, 894 (2016).ADSCrossRefGoogle Scholar
  15. 15.
    N. D. Zhukov, E. G. Glukhovskoi, and A. A. Khazanov, Semiconductors 50, 756 (2016).ADSCrossRefGoogle Scholar
  16. 16.
    N. V. Egorov and E. P. Sheshin, Electronic Emission (Intellekt, Moscow, 2011) [in Russian].Google Scholar
  17. 17.
    E. I. Goldman, Yu. B. Gulyaev, A. G. Zhdan, and G. V. Chucheva, Semiconductors 44, 1016 (2010).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • N. D. Zhukov
    • 1
  • D. S. Mosiyash
    • 1
  • I. V. Sinev
    • 2
  • A. A. Khazanov
    • 1
  • A. V. Smirnov
    • 2
  • I. V. Lapshin
    • 3
  1. 1.Ref-SVET CompanySaratovRussia
  2. 2.Saratov State UniversitySaratovRussia
  3. 3.State Research and Design Institute of the Rare Metal IndustryMoscowRussia

Personalised recommendations