Technical Physics Letters

, Volume 43, Issue 12, pp 1132–1135 | Cite as

The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals

  • R. K. Yafarov


Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.


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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  1. 1.Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Russian Academy of SciencesSaratovRussia

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