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The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals

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Abstract

Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.

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Authors and Affiliations

  1. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov, 410019, Russia

    R. K. Yafarov

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  1. R. K. Yafarov
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Correspondence to R. K. Yafarov.

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Original Russian Text © R.K. Yafarov, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 24, pp. 88–95.

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Yafarov, R.K. The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals. Tech. Phys. Lett. 43, 1132–1135 (2017). https://doi.org/10.1134/S1063785017120288

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  • DOI: https://doi.org/10.1134/S1063785017120288

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