Technical Physics Letters

, Volume 43, Issue 12, pp 1132–1135 | Cite as

The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals

Article

Abstract

Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    L. F. Velásquez-García, S. Guerrera, Y. Niu, and A. I. Akinwande, IEEE Trans. Electron Dev. 58, 1783 (2011).ADSCrossRefGoogle Scholar
  2. 2.
    Yu. B. Gulyaev, N. P. Aban’shin, B. I. Gorfinkel’, S. P. Morev, A. F. Rezchikov, N. I. Sinitsyn, and A. N. Yakunin, Tech. Phys. Lett. 39, 525 (2013).ADSCrossRefGoogle Scholar
  3. 3.
    R. K. Yafarov and V. Ya. Shanygin, Semiconductors 51, 531 (2017).ADSCrossRefGoogle Scholar
  4. 4.
    S. Sze, VLSI Technology (McGraw-Hill, New York, 1988; Mir, Moscow, 1986), Vol.1.Google Scholar
  5. 5.
    K. Kh. Nusupov, N. B. Beisenkhanov, I. V. Valitova, E. A. Dmitrieva, D. Zhumagaliuly, and E. A. Shilenko, Phys. Solid State 48, 1255 (2006).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  1. 1.Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Russian Academy of SciencesSaratovRussia

Personalised recommendations