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A high-speed quasi-optical wave phase switch based on the induced photoconductivity effect in silicon

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Abstract

A new microwave switch is proposed, in which the active element represents a metal reflector with a semiconductor plate on a mirror surface. The wave beam phase switching is ensured by a conducting layer formed in the semiconductor by laser radiation with quantum energy approximately equal to the bandgap width. Using a disk of high-purity silicon irradiated by a pulsed Ti:sapphire laser, a 180° phase switching in a 30-GHz wave beam has been studied. At a low microwave power level, the wave phase was effectively switched during a time on the order of several nanoseconds.

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Authors and Affiliations

  1. Institute of Applied Physics, Russian Academy of Sciences, Nizhni Novgorod, Russia

    A. A. Vikharev, G. G. Denisov, Vl. V. Kocharovskiĭ, S. V. Kuzikov, V. V. Parshin, N. Yu. Peskov, A. N. Stepanov, D. I. Sobolev & M. Yu. Shmelev

Authors
  1. A. A. Vikharev
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  2. G. G. Denisov
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  3. Vl. V. Kocharovskiĭ
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  4. S. V. Kuzikov
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  5. V. V. Parshin
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  6. N. Yu. Peskov
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  7. A. N. Stepanov
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  8. D. I. Sobolev
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  9. M. Yu. Shmelev
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Corresponding author

Correspondence to A. A. Vikharev.

Additional information

Original Russian Text © A.A. Vikharev, G.G. Denisov, Vl. V. Kocharovskiĭ, S.V. Kuzikov, V.V. Parshin, N.Yu. Peskov, A.N. Stepanov, D.I. Sobolev, M.Yu. Shmelev, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 17, pp. 38–45.

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Vikharev, A.A., Denisov, G.G., Kocharovskiĭ, V.V. et al. A high-speed quasi-optical wave phase switch based on the induced photoconductivity effect in silicon. Tech. Phys. Lett. 33, 735–737 (2007). https://doi.org/10.1134/S1063785007090064

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  • DOI: https://doi.org/10.1134/S1063785007090064

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