It is shown that a film consisting of the Mo–O, Mo–Ba–O, and Ba–O compounds is formed in the ion-implanted layer upon implantation of MoO3 with the Ba+ ions. Such a process leads to a sharp variation in the density of state of valence electrons, a decrease in work function eφ to 2.7 eV, a decrease in band gap Eg by a factor of about 1.5, and an increase in maximum coefficient of the secondary electron emission σm by a factor of 1.5. It is shown that the emission efficiency of the secondary electrons of the near-surface layer of pure Mo is significantly higher than the emission efficiency of the ion-implanted Mo layers. Thus, an increase in coefficient σm after the ion implantation is predominantly due to a decrease in surface work function eφ. Heating of the ion-implanted MoO3 to 900 K leads to a decrease in work function eφ to 2 eV, and coefficient σm increases when temperature increases to 1000 K.
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The authors declare that there is no conflict of interest.
Translated by A. Chikishev
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Umirzakov, B.E., Tashmukhamedova, D.A., Gulyamova, S.T. et al. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films. Tech. Phys. 65, 795–798 (2020). https://doi.org/10.1134/S1063784220050242