Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films


It is shown that a film consisting of the Mo–O, Mo–Ba–O, and Ba–O compounds is formed in the ion-implanted layer upon implantation of MoO3 with the Ba+ ions. Such a process leads to a sharp variation in the density of state of valence electrons, a decrease in work function eφ to 2.7 eV, a decrease in band gap Eg by a factor of about 1.5, and an increase in maximum coefficient of the secondary electron emission σm by a factor of 1.5. It is shown that the emission efficiency of the secondary electrons of the near-surface layer of pure Mo is significantly higher than the emission efficiency of the ion-implanted Mo layers. Thus, an increase in coefficient σm after the ion implantation is predominantly due to a decrease in surface work function eφ. Heating of the ion-implanted MoO3 to 900 K leads to a decrease in work function eφ to 2 eV, and coefficient σm increases when temperature increases to 1000 K.

This is a preview of subscription content, log in to check access.

Fig. 1.
Fig. 2.
Fig. 3.


  1. 1

    L. N. Bugerko, N. V. Borisova, V. E. Surovaya, and G. O. Eremeeva, Polzunov. Vestn. Obshch. Teor. Khim., No. 1, 77 (2013). http://elib.altstu.ru/journals/Files/pv2013_01/pdf/077bugerko.pdf.

  2. 2

    V. N. Andreev, S. E. Nikitin, V. A. Klimov, S. V. Kozyrev, D. V. Leshchev, and K. F. Shtel'makh, Phys. Solid State 43, 788 (2001). http://journals.ioffe.ru/articles/viewPDF/38146

    ADS  Article  Google Scholar 

  3. 3

    J. N. Yao, Y. A. Yang, and B. H. Loo, J. Phys. Chem. B 102, 1856 (1998). https://doi.org/10.1021/jp972217u.

    Article  Google Scholar 

  4. 4

    E. P. Surovoi, N. V. Borisova, L. N. Bugerko, V. E. Surovaya, and G. O. Ramazanova, Russ. J. Phys. Chem. A 87, 2063 (2013).

    ADS  Article  Google Scholar 

  5. 5

    Maosong Tong, Guorui Dai, Yuanda Wu, Xiuli He, and Dingsan Gao, J. Mater. Sci. 36, 2535 (2001). https://link.springer.com/article/10.1023/A%3A1017950619864.

  6. 6

    T. Driscoll, H. T. Kim, B. G. Chae, M. di Ventra, and D. N. Basov, Appl. Phys. Lett. 95, 043503 (2009). https://doi.org/10.1063/1.3187531.

    ADS  Article  Google Scholar 

  7. 7

    R. Xie, C. T. Bui, B. Varghese, Q. Zhang, C. H. Sow, B. Li, and J. T. L. Thong, Adv. Funct. Mater. 21, 1602 (2011). https://doi.org/10.1002/adfm.201002436.

    Article  Google Scholar 

  8. 8

    V. P. Malinenko, A. L. Pergament, and A. O. Gorbakov, Uch. Zap. Petrozav. Univ., Fiz.-Mat. Nauki., No. 2, 100 (2014). http://uchzap.petrsu.ru/files/n139.pdf.

  9. 9

    A. I. Gavrilyuk and N. A. Sekushin, Electrochromism and Photochromism in Tungsten and Molybdenum Oxides (Nauka, Leningrad, 1990) [in Russian].

  10. 10

    V. S. Kovivchak and T. V. Panova, J. Surf. Invest.: X-ray, Synchrotr. Neutron Tech. 10, 1226 (2016). https://doi.org/10.1134/S1027451016050311.

    Article  Google Scholar 

  11. 11

    V. S. Kovivchak and T. V. Panova, in Proceedings of the 11th International Conference on Interaction of Radiation with Solids, Sept. 23–25, 2015, Minsk, Belarus', p. 302.

  12. 12

    G. Kh. Allayarova, Zh. Sh. Sodikzhanov, R. M. Erkulov, A. U. Khuzhaniyazova, and D. A. Tashmukhamedova, in Proceedings of the 49th International Tulinov Conference on Physics of the Interaction of Charged Particles with Crystals, May 29–31, 2019, p. 39.

  13. 13

    B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, and G. K. Allayarova, Tech. Phys. 64, 1051 (2019). https://doi.org/10.1134/S1063784219070260.

    ADS  Article  Google Scholar 

  14. 14

    S. B. Donaev, F. Djurabekova, D. A. Tashmukhamedova, and B. E. Umirzakov, Phys. Status Solidi C 12, 89 (2015). https://doi.org/10.1002/pssc.201400156

    ADS  Article  Google Scholar 

  15. 15

    M. B. Yusupjanova, D. A. Tashmukhamedova, and B. E. Umirzakov, Tech. Phys. 61, 628 (2016). https://doi.org/10.1134/S1063784216040253.

    ADS  Article  Google Scholar 

  16. 16

    V. K. Adamchuk and S. I. Fedoseenko, Izv. Akad. Nauk SSSR, Ser. Fiz. 43, 523 (1979).

Download references

Author information



Corresponding author

Correspondence to B. E. Umirzakov.

Ethics declarations

The authors declare that there is no conflict of interest.

Additional information

Translated by A. Chikishev

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Umirzakov, B.E., Tashmukhamedova, D.A., Gulyamova, S.T. et al. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films. Tech. Phys. 65, 795–798 (2020). https://doi.org/10.1134/S1063784220050242

Download citation