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Technical Physics

, Volume 64, Issue 5, pp 708–710 | Cite as

Electronic and Optical Properties of NiSi2/Si Nanofilms

  • B. E. UmirzakovEmail author
  • D. A. Tashmukhamedova
  • A. K. Tashatov
  • N. M. Mustafoeva
PHYSICAL ELECTRONICS
  • 16 Downloads

Abstract

Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi2/Si (111) nanofilms with a thickness of 3.0–6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi2 films start to set in at d = 5.0–6.0 nm.

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • B. E. Umirzakov
    • 1
    Email author
  • D. A. Tashmukhamedova
    • 1
  • A. K. Tashatov
    • 1
  • N. M. Mustafoeva
    • 1
  1. 1.Tashkent State Technical UniversityTashkentUzbekistan

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