Abstract
The traps of charge carriers in thermal films of silicon dioxide and silicon dioxide with a nanocomposite layer consisting of silicon oxide and silicon nanocrystallites have been studied using the methods of Kelvin-probe microscopy and cathode-luminescence. Based on experimental studies, the presence of electrons and holes in the trap samples is established. The effect of the charge state of electron traps on the luminescent properties of films is demonstrated. It is shown that the number of traps in nanocomposite layers is greater than in thermal oxides, but their activation energies are close in their values. This suggests that the nature of the traps in such layers is the same.
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REFERENCES
V. Kumar, Nanosilicon (Elsevier, Amsterdam, 2007), p. 361.
S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
S. K. Lai, IBM J. Res. Dev. 52, 529 (2008).
L. Khriachtchev, Silicon Nanophotonics: Basic Principles, Current Status and Perspectives (Pan Stanford, Singapore, 2008).
G. Conibeera, M. Greena, R. Corkisha, Y. Choa, E.‑C. Chob, C.-W. Jianga, T. Fangsuwannaraka, E. Pinka, Y. Huanga, T. Puzzera, T. Trupkea, B. Richardsc, A. Shalava, and K.-I. Lin, Thin Solid Films 511–512, 654 (2006).
E. V. Ivanova, A. A. Sitnikova, O. V. Aleksandrov, and M. V. Zamoryanskaya, Semiconductors 50, 791 (2016).
E. V. Ivanova, P. A. Dementev, A. A. Sitnikova, O. V. Aleksandrov, and M. V. Zamoryanskaya, J. Electron. Mater. 47, 3969 (2018).
E. V. Ivanova and M. V. Zamoryanskaya, Phys. Solid State 58, 1962 (2016).
D. Lehninger, P. Seidel, M. Geyer, F. Schneider, V. Klemm, D. Rafaja, J. von Borany, and J. Heitmann, Appl. Phys. Lett. 106, 023116 (2015).
E. Yurchuk, J. Muller, S. Muller, J. Paul, M. Pesic, R. van Bentum, U. Schroeder, and T. Mikolajick, IEEE Trans. Electron Dev. 63, 3501 (2016).
M. S. Dunaevskiy, P. A. Alekseev, P. Girard, E. Lahderanta, A. Lashkul, and A. N. Titkov, J. Appl. Phys. 110, 084304 (2011).
Ze-Qun Cui, Shun Wang, Jian-Mei Chen, Xu Gao, Bin Dong, Li-Feng Chi, and Sui-Dong Wang, Appl. Phys. Lett. 106, 123303 (2015).
P. A. Dement’ev, P. A. Alekseev, M. S. Dunaevskii, and A. N. Aleshin, J. Phys.: Conf. Ser. 661, 012029 (2015).
K. N. Orekhova, R. Tomala, D. Hreniak, W. Strek, and M. V. Zamoryanskaya, Opt. Mater. 74 (S1), 170 (2016).
M. V. Zamoryanskaya, S. G. Konnikov, and A. N. Zamoryanskii, Instrum. Exp. Tech. 47, 477 (2004).
J. Goldstein, D. Newbury, D. Joy, C. Lyman, P. Echlin, and E. Lifshin, Scanning Electron Microscopy and X‑Ray Microanalysis (Academic, Plenum, New York, 2003), p. 689.
M. M. Perlman, T. J. Sonnonstine, and J. A. St. Pierre, J. Appl. Phys. 47, 5016 (1976).
L. N. Skuja and A. R. Silin, Phys. Status Solidi A 70, 43 (1982).
H.-J. Fitting, T. Barfels, A. N. Trukhin, B. Schmidt, A. Gulans, and A. von Czarnovski, J. Non-Cryst. Solids 303, 218 (2002).
E. V. Kolesnikova (Ivanova) and M. V. Zamoryanskaya, Phys. B: Condens. Matter 404, 4653 (2009).
O. V. Aleksandrov and N. N. Afonin, Tech. Phys. 48, 580 (2003).
O. V. Aleksandrov and N. N. Afonin, Semiconductors 32, 15 (1998).
ACKNOWLEDGMENTS
The authors are grateful to O.V. Aleksandrov (St. Petersburg Electrotechnical University “LETI”) for providing samples and assistance in calculating the doping of films.
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Dement’ev, P.A., Ivanova, E.V. & Zamoryanskaya, M.V. Traps in the Nanocomposite Layer of Silicon–Silicon Dioxide and Their Effect on the Luminescent Properties. Phys. Solid State 61, 1394–1400 (2019). https://doi.org/10.1134/S1063783419080110
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DOI: https://doi.org/10.1134/S1063783419080110