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Response of the Dielectric Parameters of (110)SrTiO3 Films to the Formation of Ferroelectric Domains in Their Volume

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Abstract

Three-layer SrRuO3/SrTiO3/SrRuO3 heterostructures were grown by laser evaporation on (110)LaAlO3 substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO3 layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO3 intermediate layer upon varying the temperature and intensity of an external electric field was studied.

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Funding

The work was supported by the Presidium of the Russian Academy of Sciences.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    Yu. A. Boikov & V. A. Danilov

Authors
  1. Yu. A. Boikov
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  2. V. A. Danilov
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Correspondence to Yu. A. Boikov.

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The authors declare that they have no conflicts of interest.

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Translated by O. Zhukova

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Boikov, Y.A., Danilov, V.A. Response of the Dielectric Parameters of (110)SrTiO3 Films to the Formation of Ferroelectric Domains in Their Volume. Phys. Solid State 61, 1425–1427 (2019). https://doi.org/10.1134/S1063783419080092

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  • DOI: https://doi.org/10.1134/S1063783419080092

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