The high-power picosecond optical pumping of a thin GaAs layer generates intense picosecond stimulated emission. The emission spectrum is a light continuum. Based on the results of previous experimental work, the following is carried out. (a) The amplification lengths of the emission spectral components, i.e., the different distances over which different emission components are amplified in the active medium produced by pumping and (b) the dependences of the characteristic relaxation time of emission components on their gain lengths are estimated. It is shown that the spectrum of the product of the gain length and the gain linearly relates the spectra of the spontaneous and stimulated emission of GaAs. This relation is established upon gain saturation which is evidenced by a dip in the gain spectrum, “burned out” by intense emission.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov, Semiconductors 53, 1431 (2019).
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov, J. Exp. Theor. Phys. 117, 191 (2013).
E. O. Goebel, O. Hildebrand, and K. Lohnert, IEEE J. Quant. Electron. 13, 848 (1977).
V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1981) [in Russian].
O. Svelto, Principles of Lasers (Plenum, New York, 1976).
N. N. Ageeva, I. L. Bronevoi, E. G. Dyadyushkin, V. A. Mironov, S. E. Kumekov, and V. I. Perel’, Solid State Commun. 72, 625 (1989).
J. Shah, R. F. Leheny, and C. Lin, Solid State Commun. 18, 1035 (1976).
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov, Semiconductors 51, 565 (2017).
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov, Semiconductors 36, 136 (2002).
L. W. Casperson, J. Appl. Phys. 48, 256 (1977).
V. D. Solov’ev, Physics of Laser, Lecture Course. http://elib.spbstu.ru/dl/2313.pdf/download/2313.pdf.
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov, Semiconductors 55 (2) (2021, in press).
Yu. D. Kalafati and V. A. Kokin, Sov. Phys. JETP 72, 1003 (1991).
S. E. Kumekov and V. I. Perel’, Sov. Phys. JETP 67, 193 (1988).
J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).
H. C. Casey and M. B. Panish, Heterostructure Lasers (Academic Press, New York, San Francisco, London, 1978).
Semiconductor Lasers I: Fundamental, Ed. by H. Takuma and M. Karino (OHM Publ., Tokyo, 1987).
This study was supported within a State contract.
The authors declare that they have no conflict of interest.
Translated by A. Kazantsev
About this article
Cite this article
Ageeva, N.N., Bronevoi, I.L., Zabegaev, D.N. et al. Amplification Lengths of Spectral Components of Intrinsic Stimulated Picosecond Emission. Dependence of the Characteristic Relaxation Time of These Components on Their Amplification Lengths. Relation Between Stimulated and Spontaneous Emission Spectra in GaAs. Semiconductors 55, 162–167 (2021). https://doi.org/10.1134/S1063782621020044
- stimulated picosecond emission
- emission spectral components
- amplification length
- characteristic relaxation time
- gain saturation
- relation between stimulated and spontaneous emissions
- gallium arsenide