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Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

The current–voltage characteristics of n+-GaAs/n0-GaAs/N0-AlGaAs/N+-AlGaAs/n+-GaAs isotype heterostructures and n+-GaAs/n0-GaAs/n+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n0-GaAs into N0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N0-AlGaAs layer of 1.0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.

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FUNDING

The study was supported by a program of the Russian Foundation for Basic Research, grant no. 18-08-01130 A.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov & N. A. Pikhtin

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  1. S. O. Slipchenko
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  2. A. A. Podoskin
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  3. O. S. Soboleva
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  4. V. S. Yuferev
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  5. V. S. Golovin
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  6. P. S. Gavrina
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  7. D. N. Romanovich
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  8. I. V. Miroshnikov
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  9. N. A. Pikhtin
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Correspondence to S. O. Slipchenko.

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Translated by M. Tagirdzhanov

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Slipchenko, S.O., Podoskin, A.A., Soboleva, O.S. et al. Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities. Semiconductors 53, 806–813 (2019). https://doi.org/10.1134/S1063782619060241

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