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Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System

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Abstract

The results of studying dielectric relaxation processes in the Ge28.5Pb15S56.5 glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy Ep = 0.40 eV and the molecular dipole moment μ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as D+ and D–.

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Authors and Affiliations

  1. Alexander Herzen State Pedagogical University of Russia, St. Petersburg, 191186, Russia

    R. A. Castro, N. I. Anisimova & A. A. Kononov

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  1. R. A. Castro
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  2. N. I. Anisimova
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  3. A. A. Kononov
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Correspondence to R. A. Castro.

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Original Russian Text © R.A. Castro, N.I. Anisimova, A.A. Kononov, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 8, pp. 912–915.

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Castro, R.A., Anisimova, N.I. & Kononov, A.A. Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System. Semiconductors 52, 1043–1046 (2018). https://doi.org/10.1134/S1063782618080092

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  • DOI: https://doi.org/10.1134/S1063782618080092

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