Semiconductors

, Volume 52, Issue 6, pp 702–707 | Cite as

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

  • V. S. Evstigneev
  • V. S. Varavin
  • A. V. Chilyasov
  • V. G. Remesnik
  • A. N. Moiseev
  • B. S. Stepanov
Electronic Properties of Semiconductors
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Abstract

The temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped p-type Hg1 – xCd x Te epitaxial layers with x ≈ 0.4 grown by the MOCVD-IMP (metalorganic chemical vapor deposition–interdiffusion multilayer process) method are studied. It is shown that the temperature dependences of the charge-carrier concentration can be described by a model assuming the presence of one acceptor and one donor level. The ionization energies of acceptors in the undoped and arsenic-doped materials are 14 and 3.6 meV, respectively. It is established that the dominant recombination mechanism in the undoped layers is Shockley–Read–Hall recombination, and after low-temperature equilibrium annealing in mercury vapors (230°C, 24 h), the dominant mechanism is radiative recombination. The fundamental limitation of the lifetime in the arsenic-doped material is caused by the Auger-7 process. Activation annealing (360°C, 2 h) of the doped layers makes it possible to attain the 100% activation of arsenic.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. S. Evstigneev
    • 1
    • 2
  • V. S. Varavin
    • 3
  • A. V. Chilyasov
    • 1
  • V. G. Remesnik
    • 3
  • A. N. Moiseev
    • 1
    • 2
  • B. S. Stepanov
    • 1
  1. 1.Devyatykh Institute of Chemistry of High-Purity SubstancesRussian Academy of SciencesNizhny NovgorodRussia
  2. 2.Lobachevsky State University of Nizhny NovgorodNizhny NovgorodRussia
  3. 3.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia

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