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Semiconductors

, Volume 52, Issue 6, pp 783–788 | Cite as

Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate

  • O. V. Aleksandrov
  • S. A. Mokrushina
Physics of Semiconductor Devices
  • 10 Downloads

Abstract

A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n- and p-channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.St. Petersburg State Electrotechnical University “LETI”St. PetersburgRussia

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