Abstract
A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n- and p-channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.
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Original Russian Text © O.V. Aleksandrov, S.A. Mokrushina, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 6, pp. 637–642.
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Aleksandrov, O.V., Mokrushina, S.A. Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate. Semiconductors 52, 783–788 (2018). https://doi.org/10.1134/S1063782618060027
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DOI: https://doi.org/10.1134/S1063782618060027