Abstract
The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
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Timoshnev, S.N., Mizerov, A.M., Sobolev, M.S. et al. Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy. Semiconductors 52, 660–663 (2018). https://doi.org/10.1134/S1063782618050342
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DOI: https://doi.org/10.1134/S1063782618050342