, Volume 52, Issue 5, pp 660–663 | Cite as

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

  • S. N. Timoshnev
  • A. M. Mizerov
  • M. S. Sobolev
  • E. V. Nikitina
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology


The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • S. N. Timoshnev
    • 1
  • A. M. Mizerov
    • 1
  • M. S. Sobolev
    • 1
  • E. V. Nikitina
    • 1
  1. 1.Saint Petersburg National Research Academic University of the Russian Academy of SciencesSt. PetersburgRussia

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