Abstract
The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.
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Shtrom, I.V., Filosofov, N.G., Agekian, V.F. et al. Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate. Semiconductors 52, 602–604 (2018). https://doi.org/10.1134/S1063782618050299
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DOI: https://doi.org/10.1134/S1063782618050299