Semiconductors

, Volume 52, Issue 5, pp 651–653 | Cite as

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

  • R. R. Reznik
  • K. P. Kotlyar
  • I. P. Soshnikov
  • S. A. Kukushkin
  • A. V. Osipov
  • G. E. Cirlin
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology

Abstract

The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • R. R. Reznik
    • 1
    • 2
    • 3
    • 4
  • K. P. Kotlyar
    • 1
  • I. P. Soshnikov
    • 1
    • 3
  • S. A. Kukushkin
    • 5
  • A. V. Osipov
    • 5
  • G. E. Cirlin
    • 1
    • 2
    • 3
    • 4
  1. 1.St. Petersburg Academic University Russian Academy of SciencesSt. PetersburgRussia
  2. 2.ITMO UniversitySt. PetersburgRussia
  3. 3.Institute for Analytical Instrumentation Russian Academy of SciencesSt. PetersburgRussia
  4. 4.Peter the Great Polytechnic UniversitySt. PetersburgRussia
  5. 5.Institute of Problems of Mechanical Engineering Russian Academy of ScienceSt. PetersburgRussia

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