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Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold

  • XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
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Abstract

A straightforward method for thin metal films production and bringing them at the percolation threshold has been developed. The method is based on the controlled thermal annealing of initially conductive metal films. Electrical conductivity studies of thin silver, gold, and copper films at the percolation threshold revealed the existence of high-resistance states (1012 Ω) and low-resistance states (103 Ω) of the films. The switching between these states under bias is reversible. The characteristic switching times are 200 ns, 2 μs, and 60 μs for silver, gold, and copper films, correspondently.

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Authors and Affiliations

  1. Saint Petersburg State University of Information Technologies, Mechanics and Optics (ITMO University), St. Petersburg, 197101, Russia

    I. A. Gladskikh, M. G. Gushchin & T. A. Vartanyan

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  1. I. A. Gladskikh
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  2. M. G. Gushchin
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  3. T. A. Vartanyan
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Correspondence to I. A. Gladskikh.

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Gladskikh, I.A., Gushchin, M.G. & Vartanyan, T.A. Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold. Semiconductors 52, 671–674 (2018). https://doi.org/10.1134/S1063782618050093

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  • DOI: https://doi.org/10.1134/S1063782618050093

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