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Semiconductors

, Volume 52, Issue 5, pp 625–627 | Cite as

Ion Synthesis: Si–Ge Quantum Dots

  • N. N. Gerasimenko
  • N. S. Balakleyskiy
  • A. D. Volokhovskiy
  • D. I. Smirnov
  • O. A. Zaporozhan
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology

Abstract

We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 1014 to 1017 cm–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • N. N. Gerasimenko
    • 1
  • N. S. Balakleyskiy
    • 2
  • A. D. Volokhovskiy
    • 3
  • D. I. Smirnov
    • 4
  • O. A. Zaporozhan
    • 1
  1. 1.National Research University of Electronic TechnologyMoscowRussia
  2. 2.AngstrremMoscowRussia
  3. 3.Angstrem-TMoscowRussia
  4. 4.P.N. Lebedev Physical Institute of the RASMoscowRussia

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