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Red Single-Photon Emission from InAs/AlGaAs Quantum Dots

  • XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure
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Abstract

We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 μm, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence (μ-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of g(2)(0) ~ 0.17 that is a clear evidence of non-classical light.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, 194021, Russia

    M. V. Rakhlin, K. G. Belyaev, G. V. Klimko, S. V. Ivanov & A. A. Toropov

  2. St. Petersburg Academic University Russian Academy of Science, St. Petersburg, 194021, Russia

    I. S. Mukhin

  3. ITMO University, St. Petersburg, 197101, Russia

    I. S. Mukhin

Authors
  1. M. V. Rakhlin
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  2. K. G. Belyaev
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  3. G. V. Klimko
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  4. I. S. Mukhin
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  5. S. V. Ivanov
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  6. A. A. Toropov
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Correspondence to M. V. Rakhlin.

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Rakhlin, M.V., Belyaev, K.G., Klimko, G.V. et al. Red Single-Photon Emission from InAs/AlGaAs Quantum Dots. Semiconductors 52, 511–513 (2018). https://doi.org/10.1134/S1063782618040243

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  • DOI: https://doi.org/10.1134/S1063782618040243

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