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Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

  • XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures
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Abstract

In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.

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Authors and Affiliations

  1. St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. M. Mozharov, A. A. Vasiliev, A. D. Bolshakov, G. A. Sapunov, V. V. Fedorov, G. E. Cirlin & I. S. Mukhin

  2. ITMO University, St. Petersburg, 197101, Russia

    G. E. Cirlin & I. S. Mukhin

  3. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190103, Russia

    G. E. Cirlin

Authors
  1. A. M. Mozharov
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  2. A. A. Vasiliev
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  3. A. D. Bolshakov
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  4. G. A. Sapunov
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  5. V. V. Fedorov
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  6. G. E. Cirlin
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  7. I. S. Mukhin
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Corresponding author

Correspondence to A. M. Mozharov.

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Mozharov, A.M., Vasiliev, A.A., Bolshakov, A.D. et al. Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential. Semiconductors 52, 489–492 (2018). https://doi.org/10.1134/S1063782618040231

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  • DOI: https://doi.org/10.1134/S1063782618040231

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