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Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.

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Authors and Affiliations

  1. Saratov State University, Saratov, 410012, Russia

    V. F. Kabanov, A. I. Mihaylov, Ya. E. Pereverzev & M. I. Shishkin

  2. OOO Volga-Svet, Saratov, 410033, Russia

    N. D. Zhukov, D. S. Mosiyash & A. A. Hazanov

Authors
  1. N. D. Zhukov
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  2. V. F. Kabanov
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  3. A. I. Mihaylov
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  4. D. S. Mosiyash
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  5. Ya. E. Pereverzev
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  6. A. A. Hazanov
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  7. M. I. Shishkin
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Corresponding author

Correspondence to Ya. E. Pereverzev.

Additional information

Original Russian Text © N.D. Zhukov, V.F. Kabanov, A.I. Mihaylov, D.S. Mosiyash, Ya.E. Pereverzev, A.A. Hazanov, M.I. Shishkin, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 1, pp. 83–88.

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Zhukov, N.D., Kabanov, V.F., Mihaylov, A.I. et al. Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure. Semiconductors 52, 78–83 (2018). https://doi.org/10.1134/S1063782618010256

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  • DOI: https://doi.org/10.1134/S1063782618010256

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