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Semiconductors

, Volume 52, Issue 1, pp 19–23 | Cite as

Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires

  • V. N. Trukhin
  • A. D. Bouravleuv
  • I. A. Mustafin
  • G. E. Cirlin
  • J. P. Kakko
  • H. Lipsanen
XXI International Symposium “Nanophysics And Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
  • 18 Downloads

Abstract

Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. N. Trukhin
    • 1
  • A. D. Bouravleuv
    • 3
  • I. A. Mustafin
    • 1
    • 2
  • G. E. Cirlin
    • 3
  • J. P. Kakko
    • 4
  • H. Lipsanen
    • 4
  1. 1.Ioffe InstituteSt. PetersburgRussia
  2. 2.ITMOSt. PetersburgRussia
  3. 3.St. Petersburg Academic UniversityRussian Academy of SciencesSt. PetersburgRussia
  4. 4.Department of Electronics and NanoengineeringAalto UniversityEspooFinland

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