Semiconductors

, Volume 52, Issue 1, pp 120–125 | Cite as

Optimization of the Structural Properties and Surface Morphology of a Convex-Graded In x Al1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)

  • V. A. Solov’ev
  • M. Yu. Chernov
  • A. A. Sitnikova
  • P. N. Brunkov
  • B. Ya. Meltser
  • S. V. Ivanov
Fabrication, Treatment, and Testing of Materials and Structures
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Abstract

The results of optimization of the design and growth conditions of an In x Al1–xAs metamorphic buffer layer with a high In content (x = 0.05–0.83) grown via MBE on GaAs(001) substrates with the purpose of optimizing its surface morphological characteristics and structural properties and lowering the surface density of threading dislocations. The lowest surface-pattern roughness RMS = 2.3 nm (on an area of 10 × 10 μm) and density of threading dislocations of 5 × 107 cm–2 are found in the samples with a convex-graded metamorphic buffer layer.

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References

  1. 1.
    F. Capotondi, G. Biasiol, D. Ercolani, V. Grillo, E. Carlino, F. Romanato, and L. Sorba, Thin Solid Films 484, 400 (2005).ADSCrossRefGoogle Scholar
  2. 2.
    C. Chen, I. Farrer, S. N. Holmes, F. Sfigakis, M. P. Fletcher, H. E. Beere, and D. A. Ritchie, J. Cryst. Growth 425, 70 (2015).ADSCrossRefGoogle Scholar
  3. 3.
    Ya. V. Terent’ev, S. N. Danilov, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, M. S. Mukhin, S. V. Ivanov, and S. D. Ganichev, Appl. Phys. Lett. 104, 101111 (2014).ADSCrossRefGoogle Scholar
  4. 4.
    S. V. Sorokin, G. V. Klimko, I. V. Sedova, A. A. Sitnikova, D. A. Kirilenko, M. V. Baidakova, M. A. Yagovkina, T. A. Komissarova, K. G. Belyaev, and S. V. Ivanov, J. Cryst. Growth 455, 83 (2016).ADSCrossRefGoogle Scholar
  5. 5.
    V. A. Solov’ev, M. Yu. Chernov, B. Ya. Mel’tser, A. N. Semenov, Ya. V. Terent’ev, D. D. Firsov, O. S. Komkov, and S. V. Ivanov, Tech. Phys. Lett. 42, 1038 (2016).ADSCrossRefGoogle Scholar
  6. 6.
    F. Romanato, E. Napolitani, A. Carnera, A. V. Drigo, L. Lazzarini, G. Salviati, C. Ferrari, A. Bosacchi, and S. Franchi, J. Appl. Phys. 86, 4748 (1999).ADSCrossRefGoogle Scholar
  7. 7.
    H. Choi, Y. Jeong, J. Cho, and M. H. Jeon, J. Cryst. Growth 311, 1091 (2009).ADSCrossRefGoogle Scholar
  8. 8.
    Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, and A. I. Toropov, JETP Lett. 84, 505 (2006).ADSCrossRefGoogle Scholar
  9. 9.
    J. J. D. Lee, K. W. West, K. W. Baldwin, and L. N. Pfeiffer, J. Cryst. Growth 356, 46 (2012).ADSCrossRefGoogle Scholar
  10. 10.
    Y. Asaoka, T. Kanebishi, N. Sano, and T. Kaneko, J. Cryst. Growth 251, 40 (2003).ADSCrossRefGoogle Scholar
  11. 11.
    D. J. Dunstan, P. Kidd, L. K. Howard, and R. H. Dixon, Appl. Phys. Lett. 59, 3390 (1991).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. A. Solov’ev
    • 1
  • M. Yu. Chernov
    • 1
  • A. A. Sitnikova
    • 1
  • P. N. Brunkov
    • 1
  • B. Ya. Meltser
    • 1
  • S. V. Ivanov
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia

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