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Semiconductors

, Volume 52, Issue 1, pp 59–63 | Cite as

Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots

  • A. N. Sofronov
  • R. M. Balagula
  • D. A. Firsov
  • L. E. Vorobjev
  • A. A. Tonkikh
  • H. A. Sarkisyan
  • D. B. Hayrapetyan
  • L. S. Petrosyan
  • E. M. Kazaryan
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Abstract

The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiabatic approximation with consideration for pair Coulomb interaction. It is shown that the interaction has no effect on the frequencies of lower interlevel resonances. This fact is representative of generalized Kohn’s theorem satisfied due to the specific geometric shape of the quantum dot. The experimental and theoretical values of the transition energies are in good agreement.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. N. Sofronov
    • 1
  • R. M. Balagula
    • 1
  • D. A. Firsov
    • 1
  • L. E. Vorobjev
    • 1
  • A. A. Tonkikh
    • 2
  • H. A. Sarkisyan
    • 1
    • 3
  • D. B. Hayrapetyan
    • 3
  • L. S. Petrosyan
    • 3
    • 4
  • E. M. Kazaryan
    • 3
  1. 1.St. Petersburg Polytechnic UniversitySt. PetersburgRussia
  2. 2.OSRAM Opto Semiconductors GmbHRegensburgGermany
  3. 3.Russian–Armenian UniversityYerevanArmenia
  4. 4.Jackson State UniversityJacksonUSA

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