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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases

  • XXI International Symposium “Nanophysics And Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
  • Published:
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Abstract

A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.

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Authors and Affiliations

  1. St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. V. Shtrom, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravleuv & G. E. Cirlin

  2. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190103, Russia

    I. V. Shtrom, Yu. B. Samsonenko, R. R. Reznik, A. D. Bouravleuv & G. E. Cirlin

  3. St. Petersburg State University, St. Petersburg, 199034, Russia

    N. V. Sibirev & E. V. Ubiivovk

  4. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    N. V. Sibirev

  5. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg, 197101, Russia

    E. V. Ubiivovk, R. R. Reznik & G. E. Cirlin

Authors
  1. I. V. Shtrom
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  2. N. V. Sibirev
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  3. E. V. Ubiivovk
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  4. Yu. B. Samsonenko
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  5. A. I. Khrebtov
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  6. R. R. Reznik
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  7. A. D. Bouravleuv
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  8. G. E. Cirlin
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Corresponding author

Correspondence to I. V. Shtrom.

Additional information

Original Russian Text © I.V. Shtrom, N.V. Sibirev, E.V. Ubiivovk, Yu.B. Samsonenko, A.I. Khrebtov, R.R. Reznik, A.D. Bouravleuv, G.E. Cirlin, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 1, pp. 5–9.

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Shtrom, I.V., Sibirev, N.V., Ubiivovk, E.V. et al. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases. Semiconductors 52, 1–5 (2018). https://doi.org/10.1134/S1063782618010219

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  • DOI: https://doi.org/10.1134/S1063782618010219

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