, Volume 52, Issue 1, pp 44–52 | Cite as

Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths

  • D. Yu. Protasov
  • A. K. Bakarov
  • A. I. Toropov
  • B. Ya. Ber
  • D. Yu. Kazantsev
  • K. S. Zhuravlev
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena


The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation σ of the δ-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in σ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm2/(V s) at 77 K and 600 cm2/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing σ of the δ-layer profile.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • D. Yu. Protasov
    • 1
    • 2
  • A. K. Bakarov
    • 1
    • 3
  • A. I. Toropov
    • 1
    • 3
  • B. Ya. Ber
    • 4
  • D. Yu. Kazantsev
    • 4
  • K. S. Zhuravlev
    • 1
    • 3
  1. 1.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia
  2. 2.Novosibirsk State Technical UniversityNovosibirskRussia
  3. 3.Novosibirsk State UniversityNovosibirskRussia
  4. 4.Ioffe InstituteSt. PetersburgRussia

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