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Semiconductors

, Volume 52, Issue 1, pp 31–33 | Cite as

Effect of Hydrostatic Pressure on the Static Permittivity of Germanium

  • A. M. Musaev
Electronic Properties of Semiconductors
  • 11 Downloads

Abstract

The dependence of the static permittivity of single-crystal germanium on hydrostatic pressure up to P ≈ 7.4 GPa is studied experimentally. As the pressure is increased to P ≈ 4 GPa, the permittivity of Ge decreases by a factor of ~13 to ε = 1.22. As the pressure is increased further to P ≈ 7 GPa, a moderate increase in ε to the initial value is observed. In the range 7–7.4 GPa, the permittivity increases to a value larger than 1000. The experimental dependences obtained in the study substantially differ from the previously known dependences.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Institute of Physics, Dagestan Scientific CenterRussian Academy of SciencesMakhachkalaRussia

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