, Volume 52, Issue 1, pp 41–43 | Cite as

Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGd x S Thin Films

  • V. V. Kaminsky
  • S. M. Soloviev
  • G. D. Khavrov
  • N. V. Sharenkova
Surfaces, Interfaces, and Thin Films


The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm1–xGd x S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. V. Kaminsky
    • 1
  • S. M. Soloviev
    • 1
  • G. D. Khavrov
    • 1
  • N. V. Sharenkova
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia

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