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Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGd x S Thin Films

  • Surfaces, Interfaces, and Thin Films
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Abstract

The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm1–xGd x S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, 194021, Russia

    V. V. Kaminsky, S. M. Soloviev, G. D. Khavrov & N. V. Sharenkova

Authors
  1. V. V. Kaminsky
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  2. S. M. Soloviev
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  3. G. D. Khavrov
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  4. N. V. Sharenkova
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Corresponding author

Correspondence to V. V. Kaminsky.

Additional information

Original Russian Text © V.V. Kaminsky, S.M. Soloviev, G.D. Khavrov, N.V. Sharenkova, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 1, pp. 45–47.

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Kaminsky, V.V., Soloviev, S.M., Khavrov, G.D. et al. Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGd x S Thin Films. Semiconductors 52, 41–43 (2018). https://doi.org/10.1134/S1063782618010116

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  • DOI: https://doi.org/10.1134/S1063782618010116

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