, Volume 52, Issue 1, pp 100–104 | Cite as

On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel

  • P. A. Ivanov
Physics of Semiconductor Devices


The problem of the spatial localization of free electrons in 4H-SiC metal—oxide—semiconductor field effect transistors (MOSFETS) with an accumulation- and inversion-type n channel is theoretically analyzed. The analysis demonstrates that, in optimally designed accumulation transistors (ACCUFETs), the average distance from the surface, at which free electrons are localized, may be an order of magnitude larger than that in inversion MOSFETs. This can make 4H-SiC ACCUFETs advantageous as regards the effective carrier mobility in a conducting channel.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    M. Bhatnagar and B. J. Baliga, IEEE Electron. Dev. 40, 645 (1993).ADSCrossRefGoogle Scholar
  2. 2.
    J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., in Proceedings of the 28th Intersociety Energy Conversion Energy Conference, Atlanta, Georgia, USA, 1993.Google Scholar
  3. 3.
    J. N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch, IEEE Electron. Dev. Lett. 18, 93 (1997).ADSCrossRefGoogle Scholar
  4. 4.
    D. Okamoto, H. Yano, T. Hatayama, and T. Fuyuki, Mater. Sci. Forum 717–720, 733 (2012).CrossRefGoogle Scholar
  5. 5.
    J. Tan, A. Cooper, and M. R. Melloch, IEEE Electron. Dev. Lett. 19, 487 (1998).ADSCrossRefGoogle Scholar
  6. 6.
    P. A. Ivanov, T. P. Samsonova, V. N. Panteleev, and D. Yu. Polyakov, Semiconductors 35, 468 (2001).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Ioffe InstituteSt. PetersburgRussia

Personalised recommendations