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Semiconductors

, Volume 52, Issue 1, pp 12–18 | Cite as

Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

  • S. V. Gudina
  • V. N. Neverov
  • E. V. Ilchenko
  • A. S. Bogolubskii
  • G. I. Harus
  • N. G. Shelushinina
  • S. M. Podgornykh
  • M. V. Yakunin
  • N. N. Mikhailov
  • S. A. Dvoretsky
XXI International Symposium “Nanophysics And Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
  • 29 Downloads

Abstract

The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • S. V. Gudina
    • 1
  • V. N. Neverov
    • 1
  • E. V. Ilchenko
    • 1
  • A. S. Bogolubskii
    • 1
  • G. I. Harus
    • 1
  • N. G. Shelushinina
    • 1
  • S. M. Podgornykh
    • 1
    • 2
  • M. V. Yakunin
    • 1
    • 2
  • N. N. Mikhailov
    • 3
    • 4
  • S. A. Dvoretsky
    • 3
    • 5
  1. 1.Mikheev Institute of Metal Physics, Ural BranchRussian Academy of SciencesYekaterinburgRussia
  2. 2.Yeltsin Ural Federal UniversityYekaterinburgRussia
  3. 3.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia
  4. 4.Novosibirsk State UniversityNovosibirskRussia
  5. 5.National Research Tomsk State UniversityTomskRussia

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