Semiconductors

, Volume 52, Issue 1, pp 84–87 | Cite as

X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide

  • M. E. Boiko
  • M. D. Sharkov
  • L. B. Karlina
  • A. M. Boiko
  • S. G. Konnikov
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Abstract

An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with CuKα1-radiation). The XRD data demonstrate that the sample consists of (coherent) aligned homogeneous components. A point detector is used to obtain, in the anomalous transmission mode by Borrmann, a set of SAXS curves at sample positions varied by azimuthal rotations. The SAXS data are used to simulate a 2D SAXS pattern for the sample under study, which makes it possible to determine the long-distance translation symmetry and, consequently, the presence of a superstructure. The interplanar distances in the superstructure in the directions (110) and (1 0) of the InP lattice are found to be ~260 and 450 nm, respectively. The symmetry group of the superstructure is determined as C2v in the (001) plane of the sample lattice.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • M. E. Boiko
    • 1
  • M. D. Sharkov
    • 1
  • L. B. Karlina
    • 1
  • A. M. Boiko
    • 1
  • S. G. Konnikov
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia

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