Abstract
An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with CuKα1-radiation). The XRD data demonstrate that the sample consists of (coherent) aligned homogeneous components. A point detector is used to obtain, in the anomalous transmission mode by Borrmann, a set of SAXS curves at sample positions varied by azimuthal rotations. The SAXS data are used to simulate a 2D SAXS pattern for the sample under study, which makes it possible to determine the long-distance translation symmetry and, consequently, the presence of a superstructure. The interplanar distances in the superstructure in the directions (110) and (1 0) of the InP lattice are found to be ~260 and 450 nm, respectively. The symmetry group of the superstructure is determined as C2v in the (001) plane of the sample lattice.
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Original Russian Text © M.E. Boiko, M.D. Sharkov, L.B. Karlina, A.M. Boiko, S.G. Konnikov, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 1, pp. 89–92.
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Boiko, M.E., Sharkov, M.D., Karlina, L.B. et al. X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide. Semiconductors 52, 84–87 (2018). https://doi.org/10.1134/S1063782618010074
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DOI: https://doi.org/10.1134/S1063782618010074