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On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

  • Electronic Properties of Semiconductors
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Abstract

The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p lim = (5−6) × 1018 cm−3 and in pinning of the Fermi level at the limiting position F lim close to E V + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored.

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Authors and Affiliations

  1. Karpov Institute of Physical Chemistry, Obninsk Branch, Obninsk, 249033, Russia

    V. M. Boiko, V. S. Ermakov, N. G. Kolin & A. V. Korulin

  2. National Research Tomsk State University, Tomsk, 634050, Russia

    V. N. Brudnii

Authors
  1. V. M. Boiko
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  2. V. N. Brudnii
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  3. V. S. Ermakov
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  4. N. G. Kolin
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  5. A. V. Korulin
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Corresponding author

Correspondence to V. N. Brudnii.

Additional information

Original Russian Text © V.M. Boiko, V.N. Brudnii, V.S. Ermakov, N.G. Kolin, A.V. Korulin, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 6, pp. 782–785.

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Boiko, V.M., Brudnii, V.N., Ermakov, V.S. et al. On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level. Semiconductors 49, 763–766 (2015). https://doi.org/10.1134/S1063782615060068

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  • DOI: https://doi.org/10.1134/S1063782615060068

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