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Utilization of silicon detectors with “ideal-diode” current-voltage characteristics

  • IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012
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Abstract

The extremely low level of intrinsic noise attained in silicon detectors with “ideal-diode” current-voltage characteristics has made it possible to create measuring circuits capable of detecting currents as low as 10−16 A and, at the same time, featuring a dynamic range as large as 1011–1012.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. L. Sukhanov, P. N. Aruev, M. V. Drozdova, N. V. Zabrodskaya, V. V. Zabrodskiy, M. S. Lazeeva, V. V. Filimonov & E. V. Sherstnev

Authors
  1. V. L. Sukhanov
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  2. P. N. Aruev
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  3. M. V. Drozdova
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  4. N. V. Zabrodskaya
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  5. V. V. Zabrodskiy
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  6. M. S. Lazeeva
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  7. V. V. Filimonov
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  8. E. V. Sherstnev
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Corresponding author

Correspondence to V. V. Zabrodskiy.

Additional information

Original Russian Text © V.L. Sukhanov, P.N. Aruev, M.V. Drozdova, N.V. Zabrodskaya, V.V. Zabrodskiy, M.S. Lazeeva, V.V. Filimonov, E.V. Sherstnev, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 2, pp. 174–177.

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Sukhanov, V.L., Aruev, P.N., Drozdova, M.V. et al. Utilization of silicon detectors with “ideal-diode” current-voltage characteristics. Semiconductors 47, 209–212 (2013). https://doi.org/10.1134/S1063782613020206

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  • DOI: https://doi.org/10.1134/S1063782613020206

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