Abstract
It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.
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Original Russian Text © V.V. Samedov, 2016, published in Yadernaya Fizika i Inzhiniring, 2016, Vol. 7, No. 4, pp. 309–313.
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Samedov, V.V. Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage. Phys. Atom. Nuclei 80, 1647–1650 (2017). https://doi.org/10.1134/S1063778817090149
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DOI: https://doi.org/10.1134/S1063778817090149