Abstract
The real structures of epitaxial CVD films of germanium and diamond have been comparatively analyzed. The influence of the specific features of elastic-stress distribution in two-layer structures on the relaxation processes and dislocation distribution are considered. The influence of inhomogeneous (over thickness) plastic deformation, caused by the motion of dislocations under alternating elastic-stress field, on the formation of residual bending of substrates and films is shown by the example of epitaxial germanium structures. A significant difference in the relaxation processes in CVD films of diamond and germanium (crystallographic analog of diamond) is revealed.
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ACKNOWLEDGMENTS
This study was supported by the Ministry of Higher Education and Science within a state contract with the Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences in the part concerning the X-ray diffraction analysis of crystals and by the Russian Science Foundation (grant no. 14-12-01403-P) in the part concerning the diamond synthesis in microwave plasma.
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Translated by Yu. Sin’kov
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Prokhorov, I.A., Voloshin, A.E., Romanov, D.A. et al. Specific Features of Distribution and Relaxation of Elastic Stresses in Homoepitaxial CVD Films of Germanium and Diamond. Crystallogr. Rep. 64, 392–397 (2019). https://doi.org/10.1134/S1063774519030222
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DOI: https://doi.org/10.1134/S1063774519030222