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Crystallography Reports

, Volume 63, Issue 2, pp 284–286 | Cite as

Development of the Growth Technology of Highly Homogeneous Semiconductor Crystals

  • V. I. Strelov
  • I. A. Prokhorov
  • E. N. Korobeinikova
  • V. S. Sidorov
  • V. N. Vlasov
  • V. K. Artemyev
Crystal Growth

Abstract

Different technological solutions for growing GaSb(Te) and Ge(Ga) single crystals, making it possible to optimize the growth of highly homogeneous (at the microlevel) semiconductor crystals by the Bridgman method, are described. The possibility of implementing steady-state growth conditions (providing uniform dopant distribution over the crystal) has been experimentally confirmed.

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • V. I. Strelov
    • 1
  • I. A. Prokhorov
    • 1
  • E. N. Korobeinikova
    • 1
  • V. S. Sidorov
    • 1
  • V. N. Vlasov
    • 1
  • V. K. Artemyev
    • 2
  1. 1.Space Materials Science Laboratory, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Kaluga BranchRussian Academy of SciencesKalugaRussia
  2. 2.Joint Stock Company “State Scientific Centre of the Russian Federation–Leypunsky Institute for Physics and Power Engineering,”Obninsk, Kaluga oblastRussia

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