Influence of Resist Spreading during Its Dry Electron-Beam Etching on a Lateral Resolution

Russian Microelectronics volume 50, pages19–23(2021)Cite this article

Abstract

The influence of the spreading process of a resist on a decrease on a lateral resolution during its dry electron-beam etching is estimated. It is shown that the real line width cannot be explained by the scattering of electrons in the samples. Based on the profiles obtained using atomic force microscopy and scanning electron microscopy, it is demonstrated that the spreading process can significantly affect the change in the line width. Simulation in the Surface Evolver program shows that the spreading process largely explains the broadening of the trenches formed by the dry electron beam etching of the resist (DEBER).

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Funding

This work was supported by the Ministry of Science and Higher Education of Russian Federation, project no. 0066-2019-0004.

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Affiliations

  1. Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    A. G. Isaev, F. A. Sidorov & A. E. Rogozhin

  2. Moscow Institute of Physics and Technology (State University), 141701, Dolgoprudny, Russia

    A. G. Isaev

Authors
  1. A. G. Isaev
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  2. F. A. Sidorov
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  3. A. E. Rogozhin
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Correspondence to A. G. Isaev or F. A. Sidorov or A. E. Rogozhin.

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Isaev, A.G., Sidorov, F.A. & Rogozhin, A.E. Influence of Resist Spreading during Its Dry Electron-Beam Etching on a Lateral Resolution. Russ Microelectron 50, 19–23 (2021). https://doi.org/10.1134/S1063739721010066

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Keywords:

  • lithography
  • dry electron beam etching of the resist (DEBER)
  • polymethyl methacrylate (PMMA)