The influence of the spreading process of a resist on a decrease on a lateral resolution during its dry electron-beam etching is estimated. It is shown that the real line width cannot be explained by the scattering of electrons in the samples. Based on the profiles obtained using atomic force microscopy and scanning electron microscopy, it is demonstrated that the spreading process can significantly affect the change in the line width. Simulation in the Surface Evolver program shows that the spreading process largely explains the broadening of the trenches formed by the dry electron beam etching of the resist (DEBER).
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Bruk, M.A., Zhikharev, E.N., and Rogozhin, A.E., Formation of micro- and nanostructures with well-rounded profile by new e-beam lithography principle, Microelectron. Eng., 2016, vol. 155, pp. 92–96.
Bruk, M.A., Zhikharev, E.N., and Kalnov, V.A., A new method of formation of the masking image (relief) directly during the electron-beam exposure of the resist, Russ. Microelectron., 2013, vol. 42, no. 5, pp. 261–269.
Bruk, M.A., Zhikharev, E.N., and Streltsov, D.R., Some peculiarities of a new method of microrelief creation by the direct electron-beam etching of resist, Comput. Opt., 2015, vol. 39, no. 2, pp. 204–210.
Rogozhin, A.E., Sidorov, F.A., and Bruk, M.A., Simulation of dry e-beam etching of resist and experimental evidence, Proc. SPIE, 2018, vol. 110221, p. 110221O.
Kirchner, R. and Schift, H., Mobility based 3D simulation of selective, viscoelastic polymer reflow using surface evolver, J. Vac. Sci. Technol., 2014, vol. 32, pp. 06F701-1–7.
Kirchner, R. and Schift, H., Thermal reflow of polymers for innovative and smart 3D structures: a review, Semicond. Process., 2019, vol. 92, pp. 58–72.
Brakke, K.A., Surface Evolver Manual, Susquehanna Univ., 2013. http://facstaff.susqu.edu/b/brakke.
This work was supported by the Ministry of Science and Higher Education of Russian Federation, project no. 0066-2019-0004.
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Isaev, A.G., Sidorov, F.A. & Rogozhin, A.E. Influence of Resist Spreading during Its Dry Electron-Beam Etching on a Lateral Resolution. Russ Microelectron 50, 19–23 (2021). https://doi.org/10.1134/S1063739721010066
- dry electron beam etching of the resist (DEBER)
- polymethyl methacrylate (PMMA)