Abstract
This paper reports a study of the current–voltage (I–V) features of the p-i-p structures based on Pb1–xSnxTe:In films with the tin content х ≈ 0.31 in which the metal–insulator transition occurs. It is shown that the photocurrent is the hole current under light interband excitation, and electron trapping is dominant. The experimental and theoretical data are compared.
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Original Russian Text © D.V. Ishchenko, I.G. Neizvestnyi, N.S. Pashchin, V.N. Sherstyakova, 2018, published in Mikroelektronika, 2018, Vol. 47, No. 4.
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Ishchenko, D.V., Neizvestnyi, I.G., Pashchin, N.S. et al. Features of the Current Flow in Injection Structures Based on PbSnTe:In Films. Russ Microelectron 47, 221–225 (2018). https://doi.org/10.1134/S1063739718040042
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DOI: https://doi.org/10.1134/S1063739718040042