Abstract
Currently, copper is a priority material for the formation of interelement connections and distributions in silicon ICs. In addition, copper is widely used to create flexible printed circuit boards and multilayer hybrid ICs. We used freon R-12 (CCl2F2) as a plasma-forming medium for etching copper in this work. Freon R-12 plays an important role in the plasma etching industry by providing the technological parameters required in the process. In this article, an experimental study has been carried out of the features of the interaction of the copper surface with freon R-12, as well as the influence of the treatment time and external plasma parameters (temperature, displacement power, consumption power, gas pressure) on the quality of the near-surface copper layer.
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Original Russian Text © A.V. Dunaev, D.B. Murin, 2018, published in Mikroelektronika, 2018, Vol. 47, No. 4.
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Dunaev, A.V., Murin, D.B. Structuring Copper in the Plasma Medium of a High-Frequency Discharge. Russ Microelectron 47, 234–238 (2018). https://doi.org/10.1134/S1063739718040029
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DOI: https://doi.org/10.1134/S1063739718040029