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Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height

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Abstract

The technology to obtain a silicide Pt/Ir mixture and Pt/Ir–Si photosensitive structures with a Schottky barrier in the middle IR area is developed. It is found that the main way to detect Pt/IrSi–р–Si structures is through the photoemission of Pt/IrSi holes into silicon. Moreover, the maximal photosensitivity is observed when the Pt/IrSi is not thicker than the free path length of the holes (less than 460 Å). The energy band diagram of the Schottky barrier structures based on the Pt/IrSi–Si contact is plotted. It is determined that the electron affinity of Pt/IrSi varies within 4.7–5.26 eV depending on the operational conditions of its formation.

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Authors and Affiliations

  1. Space Research Institute of Natural Resources, Baku, Azerbaijan

    E. A. Kerimov

  2. Institute of Ecology, Baku, Azerbaijan

    N. F. Kazymov

  3. Azerbaijan Technical University, Baku, Azerbaijan

    S. N. Musaeva

Authors
  1. E. A. Kerimov
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  2. N. F. Kazymov
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  3. S. N. Musaeva
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Correspondence to E. A. Kerimov.

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Original Russian Text © E.A. Kerimov, N.F. Kazymov, S.N. Musaeva, 2018, published in Mikroelektronika, 2018, Vol. 47, No. 2.

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Kerimov, E.A., Kazymov, N.F. & Musaeva, S.N. Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height. Russ Microelectron 47, 131–136 (2018). https://doi.org/10.1134/S1063739718020063

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  • DOI: https://doi.org/10.1134/S1063739718020063

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