Russian Microelectronics

, Volume 47, Issue 2, pp 137–141 | Cite as

Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer

  • A. N. Aleshin
  • N. V. Zenchenko
  • D. S. Ponomarev
  • O. A. Ruban


This paper presents a modified nonlinear model of the Fujii transistor that incorporates the gate capacitance values obtained by capacitance-voltage measurements. It is shown that the proposed model allows us to correctly determine the operating frequency of the transistor, taking into account the effect of charged dislocation lines in the barrier layer of the heterostructure. The operating frequency values obtained with this modified model are in good agreement with the measured values.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. N. Aleshin
    • 1
  • N. V. Zenchenko
    • 1
  • D. S. Ponomarev
    • 1
  • O. A. Ruban
    • 1
  1. 1.Institute of Ultra-High Frequency Semiconductor ElectronicsRussian Academy of SciencesMoscowRussia

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