Russian Microelectronics

, Volume 46, Issue 6, pp 404–407 | Cite as

Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure

  • Yu. V. Fedorov
  • D. L. Gnatyuk
  • A. V. Zuev
  • M. V. Maitama
Article

Abstract

The results of designing low-noise broadband amplifiers on an AlGaN/AlN/GaN HEMT heterostructure are presented. In the investigations, two variants of low-noise amplifiers executed in a two-cascade circuit are considered and fabricated. The parameters of the fabricated monolithic integrated circuits of lownoise amplifiers are given.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • Yu. V. Fedorov
    • 1
  • D. L. Gnatyuk
    • 1
  • A. V. Zuev
    • 1
  • M. V. Maitama
    • 1
  1. 1.Institute of Ultra-High Frequency Semiconductor Electronics (IUHFSE)Russian Academy of SciencesMoscowRussia

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