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Russian Microelectronics

, Volume 46, Issue 6, pp 390–395 | Cite as

Electromagnetic Modeling, Technology, and Production of Microwave C3MOSHFET Switches on AlGaN/GaN Heterostructures

  • A. S. Adonin
  • A. Yu. Evgrafov
  • V. M. Minnebaev
  • N. G. Ivashchenko
  • A. V. Myakon’kikh
  • A. E. Rogozhin
  • K. V. Rudenko
Article
  • 16 Downloads

Abstract

The features of the electromagnetic modeling of a microwave switch for the frequency range of 1–20 GHz, which is then produced by C3MOSHFET technology on AlGaN/GaN heterostructures using high-K dielectrics and contacts with capacitive coupling, are considered.

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References

  1. 1.
    Vasil’ev, A.G., Kolkovskii, Yu.V., and Kontsevoi, Yu.A., SVCh pribory i ustroistva na shirokozonnykh poluprovodnikakh (Microwave Wide-Gap Semiconductor Transistors), Moscow: Tekhnosfera, 2011.Google Scholar
  2. 2.
    P., Hindle, The state of RF and microwave switches, Microwave J., 2010, vol. 53, no. 11, pp. 20–36.Google Scholar
  3. 3.
    Simin, G. et al., High-power RF switching. Using IIInitride metal-oxide-semiconductor heterojunction capacitors, IEEE Electron Dev. Lett., 2005, vol. 26, no. 2, p. 2005.CrossRefGoogle Scholar
  4. 4.
    Simin, G. et al., III-Nitride transistors with capacitively coupled contacts, Appl. Phys. Lett., 2006, vol. 89, p. 033510.CrossRefGoogle Scholar
  5. 5.
    Adonin, A.S., Evgrafov, A.Yu., Minnebaev, V.M., Perevezentsev, A.V., Chernyh, A.V., Miakonkikh, A.V., Rogozhin, A.E., and Rudenko, K.V., Microwave C3HFET AlGaN/GaN switch utilizing contacts with capacitive coupling, in Proceedings of the 25th International Crimean Conference CriMiCo’2015, 2015, vol. 2, pp. 1244–1246.Google Scholar
  6. 6.
    Adonin, A.S., Evgrafov, A.Yu., Minnebaev, V.M., Perevezentsev, A.V., Chernykh, A.V., Myakon’kikh, A.V., Rogozhin, A.E., and Rudenko, K.V., Microwave key without ohmic contacts based on AlGaN/GaN heterostructures, Elektron. Tekh., Ser. 2: Poluprovodn. Prib., 2015, no. 4 (238), pp. 6–14.Google Scholar
  7. 7.
    Clemente, I.E. and Miakonkikh, A.V., Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN, in Proceedings of the International Conference on Microand Nano-Electronics, Proc. SPIE, 2016, vol. 10224, p. 1022425.Google Scholar
  8. 8.
    Gnatyuk, D.L., Fedorov, Yu.V., et al., Experience of design of MMIC in millimeter wavelength range in IUHFSE RAS, in Materialy nauchnoi konferentsii Pul’sar 2015 (Proceedings of the Scientific Conference Pulsar’2015), 2015, pp. 129–130.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • A. S. Adonin
    • 1
  • A. Yu. Evgrafov
    • 1
  • V. M. Minnebaev
    • 1
  • N. G. Ivashchenko
    • 1
  • A. V. Myakon’kikh
    • 2
  • A. E. Rogozhin
    • 2
  • K. V. Rudenko
    • 2
  1. 1.AO Scientific and Production Enterprise NPP PulsarMoscowRussia
  2. 2.Physics and Technological InstituteRussian Academy of SciencesMoscowRussia

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