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Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films

  • Physicochemical Analysis of Inorganic Systems
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Abstract

The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р, Torr ≤ 760 and temperatures 300 ≤ Т, K ≤ 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: В + В4С, В4С + В2О3, С + В2О3 + В4С, С + В2О3, С + В2О3 + НВО2, С + НВО2, С + В4С, and a В4С phase.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    V. I. Kosyakov, V. A. Shestakov & M. L. Kosinova

Authors
  1. V. I. Kosyakov
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  2. V. A. Shestakov
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  3. M. L. Kosinova
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Corresponding author

Correspondence to V. A. Shestakov.

Additional information

Original Russian Text © V.I. Kosyakov, V.A. Shestakov, M.L. Kosinova, 2018, published in Zhurnal Neorganicheskoi Khimii, 2018, Vol. 63, No. 6, pp. 777–780.

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Kosyakov, V.I., Shestakov, V.A. & Kosinova, M.L. Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films. Russ. J. Inorg. Chem. 63, 822–825 (2018). https://doi.org/10.1134/S0036023618060153

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  • DOI: https://doi.org/10.1134/S0036023618060153

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