Abstract
The electronic and spatial structures of carbon, boron, and aluminum supertetrahedrane models of graphane have been studied by means of density functional theory methods in the supermolecular approximation (B3LYP/6-311G(df,2p)) and with imposing periodic boundary conditions (PBEPBE/6-311G (d,p), HSEH1PBE/6-311G (d,p)). Calculations predict that pure boron and aluminum structures are narrow-gap semiconductors. For supertetrahedral carbon graphane, calculations predict properties intermediate between the semiconductor and insulator properties. All bonds in the carbon system are two-center two-electron (2с–2е), while for the boron system, intratetrahedrane bonds are three-center two-electron (3с–2е), and intertetrahedrane bonds are common two-center two-electron bonds (2с–2е).
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Original Russian Text © D.V. Steglenko, S.A. Zaitsev, I.V. Getmanskii, V.V. Koval, R.M. Minyaev, V.I. Minkin, 2017, published in Zhurnal Neorganicheskoi Khimii, 2017, Vol. 62, No. 6, pp. 820–826.
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Steglenko, D.V., Zaitsev, S.A., Getmanskii, I.V. et al. Boron, carbon, and aluminum supertetrahedral graphane analogues. Russ. J. Inorg. Chem. 62, 802–807 (2017). https://doi.org/10.1134/S0036023617060237
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DOI: https://doi.org/10.1134/S0036023617060237