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Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

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Abstract

We have experimentally studied the fractional quantum Hall effect in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers p = 1, 2, 3, and 4. Minima with p = 3 disappear in magnetic fields below 7 T, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors ν = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions.

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Correspondence to A. A. Shashkin.

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Published in Russian in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2018, Vol. 107, No. 12, pp. 819–822.

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Dolgopolov, V.T., Melnikov, M.Y., Shashkin, A.A. et al. Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields. Jetp Lett. 107, 794–797 (2018). https://doi.org/10.1134/S0021364018120019

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  • DOI: https://doi.org/10.1134/S0021364018120019

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