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A Method for Reducing the Threshold Dose of Irradiation with Hydrogen Ions for Forming Blisters in Silicon

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Abstract

We consider the conditions for reducing the threshold dose of radiation-gas splitting of a silicon single crystal by using a fixed-energy two-stage irradiation with hydrogen ions in a single production cycle. It has been experimentally established that a well-developed blister structure is formed in a sample in the mode of its two-stage irradiation with hydrogen ions with E = 12.5 keV and a dose of 0.5 × 1016 cm–2 at a normal angle of incidence at the first stage and, then, with a dose of 1.0 × 1016 cm−2 at an angle of 32° at the second stage (the total dose is 1.5 × 1016 cm–2). This structure is similar to the structure in a sample irradiated in the mode of single-stage irradiation to a dose of 5 × 1016 cm–2. This fact is the indication that the conditions for more than a threefold decrease in the threshold for the formation of hydrogen blisters in silicon upon twostage irradiation with monoenergetic hydrogen ions in a single production cycle.

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References

  1. Reutov, V.F. and Ibragimov, Sh.Sh., USSR Inventor’s Certificate no. 1282757, Byull. Izobret., 2000, no.18.

  2. Bruel, M., US Patent 5374564. H01L021/76, 1995.

  3. Bruel, M., Electron. Lett., 1995, vol. 31, no. 14, p. 1201.

    Article  Google Scholar 

  4. Henley, F., Lamm, A., Kang, S., Liu, Z., and Tiam, L., Proc. of 23rd European Photovoltaic Solar Energy Conf., Valencia, Spain, 2008, p. 1090.

    Google Scholar 

  5. Zaluzhnyi, A.G., Sokurskii, S.N., and Tebus, V.N., Gelii v reaktornykh materialah (Helium in Reactor Materials), Moscow: Energoatomizdat, 1988, p.160.

    Google Scholar 

  6. Moutanabbir, O., Giguere, A., and Terreault, B., Appl. Phys. Lett., 2004, vol. 84, p. 3286.

    Article  ADS  Google Scholar 

  7. Lie, X., Cheung, N.W., Strathman, M.D., Chu, P.K., and Doele, B., Appl. Phys. Lett., 1997, vol. 71, p. 1804.

    Article  ADS  Google Scholar 

  8. Agarwall, A. and Haynes, T.E., Appl. Phys. Lett., 1998, vol. 72, p. 1086.

    Article  ADS  Google Scholar 

  9. Weldon, M.K., Marsico, V.E., Chabal, Y.J., Agarwal, A., and Eaglesham, D.J., J. Vac. Sci. Technol., 1997, no. 15, p. 1065.

    Article  Google Scholar 

  10. Zaluzhnyi, A.G., Kopytin, V.P., Kozodaev, M.A., and Suvorov, A.L., Yad. Fiz., 2005, vol. 68, no. 8, p.1.

    Google Scholar 

  11. Bedell, S.W., and Lanford, W.A., J. Appl. Phys., 2001, vol. 90, no. 3, p. 1139.

    Article  ADS  Google Scholar 

  12. Hochbauer, T., Misra, A., Nastasi, M., and Mayer, J.W., J. Appl. Phys., 2002, vol. 92, no. 5, p. 2335.

    Article  ADS  Google Scholar 

  13. Desrosiers, N. and Terreault, B., Appl. Phys. Lett., 2006, vol. 89, p. 151922.

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Dubna, Moscow oblast, 141980, Russia

    V. F. Reutov & S. N. Dmitriev

  2. National Research Nuclear University, Moscow Engineering Physics Institute, Moscow, 115409, Russia

    A. G. Zaluzhnyi

Authors
  1. V. F. Reutov
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  2. S. N. Dmitriev
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  3. A. G. Zaluzhnyi
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Corresponding author

Correspondence to V. F. Reutov.

Additional information

Original Russian Text © V.F. Reutov, S.N. Dmitriev, A.G. Zaluzhnyi, 2018, published in Pribory i Tekhnika Eksperimenta, 2018, No. 2, pp. 146–149.

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Reutov, V.F., Dmitriev, S.N. & Zaluzhnyi, A.G. A Method for Reducing the Threshold Dose of Irradiation with Hydrogen Ions for Forming Blisters in Silicon. Instrum Exp Tech 61, 313–316 (2018). https://doi.org/10.1134/S0020441218020197

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  • DOI: https://doi.org/10.1134/S0020441218020197

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