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Integrated hydrogen sensors based on MIS transistor sensitive elements: Modeling of characteristics

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Abstract

The upgraded electrophysical and electrical models of MIS transistor sensitive elements (TSE) are presented for calculating the metrological and performance characteristics of integrated hydrogen sensors and gas-analysis microsystems based on them.

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Authors and Affiliations

  1. National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute), Moscow, Russia

    B. I. Podlepetsky

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  1. B. I. Podlepetsky
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Correspondence to B. I. Podlepetsky.

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Original Russian Text © B.I. Podlepetsky, 2014, published in Datchiki i Sistemy, 2014, No. 7, pp. 2–11.

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Podlepetsky, B.I. Integrated hydrogen sensors based on MIS transistor sensitive elements: Modeling of characteristics. Autom Remote Control 76, 535–547 (2015). https://doi.org/10.1134/S0005117915030170

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  • DOI: https://doi.org/10.1134/S0005117915030170

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