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Designing and controlling the metrological parameters of photoelectric transducers based on semiconductors with multiply-charged dopants

  • Sensors and Systems
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Abstract

The initial data for designing the metrological parameters of photoelectric semiconductor transducers (PST) based on semiconductors with deep multiply-charged dopants are obtained. The ranges of correspondence between the energy characteristic of PST with multiply-charged dopants and the linear operation mode are studied. It is demonstrated that an appropriate choice of a deep multiply-charged dopant enables designing an PST with a given pass band, an improved signal/noise ratio and a higher operating temperature. Moreover, it is shown that combining control and measuring optical channels in a single photodetector allows for implementing the control method for the PST spectral sensitivity during operation.

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Authors and Affiliations

  1. Belarussian National Technical University, Minsk, Belarus

    O. K. Gusev, A. I. Svistun, L. I. Shadurskaya & N. V. Yarzhembitskaya

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  1. O. K. Gusev
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  2. A. I. Svistun
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  3. L. I. Shadurskaya
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  4. N. V. Yarzhembitskaya
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Additional information

Original Russian Text © O.K. Gusev, A.I. Svistun, L.I. Shadurskaya, N.V. Yarzhembitskaya, 2011, published in Datchiki i Sistemy, 2011, No. 1, pp. 19–23.

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Gusev, O.K., Svistun, A.I., Shadurskaya, L.I. et al. Designing and controlling the metrological parameters of photoelectric transducers based on semiconductors with multiply-charged dopants. Autom Remote Control 74, 288–294 (2013). https://doi.org/10.1134/S0005117913020112

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  • DOI: https://doi.org/10.1134/S0005117913020112

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